Modification of the lattice thermal conductivity in silicon quantum wires due to spatial confinement of acoustic phonons |
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| Institution: | 1. Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitária, 50670-901 Recife, PE, Brazil;2. Núcleo de Tecnologia, CAA, Universidade Federal de Pernambuco, 55002-970 Caruaru, PE, Brazil;3. Departamento de Física, Universidade Federal do Ceará, 60455-900 Fortaleza, Ceará, Brazil;4. Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium;1. School of Science, Shandong University of Technology, Zibo 255049, Shandong Province, China;2. State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, Shandong Province, China;3. Department of Optics, Shandong University, Jinan 250100, Shandong Province, China;4. Department of Materials and Chemical Engineering, Taishan University, Tai’an 271021, Shandong Province, China;1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan;2. Department of Physics, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan;3. National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan |
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| Abstract: | Lattice thermal conductivity in silicon quantum wires is theoretically investigated. The bulk of heat in silicon structures is carried by acoustic phonons within a small region in the first Brillouin zone. Our formalism rigorously takes into account modification of these acoustic phonon modes and phonon group velocities in free- and clamped-surface wires due to spatial confinement. From our numerical results, we predict a significant decrease (more than an order of magnitude) of the lattice thermal conductivity in cylindrical quantum wires with diameter D = 200 Å. The decrease is about two times stronger in quantum wires than in quantum wells of corresponding dimensions. Our theoretical results are in qualitative agreement with experimentally observed drop of the lattice thermal conductivity in silicon low-dimensional structures. |
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