Energy sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire |
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| Affiliation: | 1. Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, University of Göteborg and Chalmers University of Technology, Fysikgränd 3, S-41296, Göteborg, Sweden;2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 420 Zhong Shan Bei Yi Road, Shanghai, 200083, People’s Republic of China;3. Electronic Department of Material Engineering, Research School of Physics of the Australian National University, Australia;1. Department of Physics, Semnan University, Semnan 35195-363, Iran;2. Department of Physics, Faculty of Science, Qom University of Technology, Qom, Iran;1. Institute for Nanoscale Technology, University of Technology Sydney, PO Box 123, Broadway, NSW 2007, Australia;2. Australian Institute for Bioengineering and Nanotechnology, University of Queensland, QLD 4072, Australia;3. Centre for Advanced Imaging, University of Queensland, QLD 4072, Australia;4. Institute for Nanocale Technology, Sydney, Australia;5. Plasma Nanoscience Laboratories, CSIRO Manufacturing Flagship, PO Box 218, Lindfield, NSW 2070, Australia;6. Institute for Future Environments and School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane, QLD 4000, Australia;1. Department of Physics and Jiujiang Research Institute, Xiamen University, Xiamen 361005, People''s Republic of China;2. College of Information Science and Engineering, Fujian University of Technology, Fuzhou 350118, People''s Republic of China;1. Microsoft, 725 Granville St, Vancouver, British Columbia V7Y1L1, Canada;2. ING Tech Romania, Tipografilor 11-15, Sector 1, RO-013714 Bucharest, Romania;3. Department of Physics, “Politehnica” University of Bucharest, 313 Splaiul Independenţei, Bucharest RO-060042, Romania;4. Department of Solid State Physics, Yerevan State University, 0025 Yerevan, Armenia;5. Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia |
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| Abstract: | We report the successful fabrication of a V-grooveAl0.5Ga0.5As/GaAs/Al0.5Ga0.5As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire, top, vertical and side-wall well regions by micro-PL measurements. By the calculations of the energy structure, discrete states (localized sublevels) in the quantum wire region and continuum states (extended along the side-wall and vertical quantum wells) in side-wall and vertical quantum wells have been obtained in both the conduction and valence bands. The calculated excitation energies explain very well the peak positions and their temperature dependence in the photoluminescence measurements. |
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