Microwave generation by a self-sustained current oscillation in an InGaAs/InAlAs superlattice |
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| Institution: | 1. Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, A-8700 Leoben, Austria;2. Department of Materials Science, Montanuniversität Leoben, A-8700 Leoben, Austria;3. Institute of Materials Science and Technology, TU Wien, A-1060 Vienna, Austria;1. Centre for Semiconductor Components and Nanotechnology (CCS Nano), University of Campinas (UNICAMP), 13083-870 Campinas, Sao Paulo, Brazil;2. School of Physical & Material Sciences, Central University of Himachal Pradesh (CUHP), Kangra, Dharamshala HP-176215, India;3. Department of Physics, University of Santiago, Avenida Ecuador 3493, Estacion Central, Santiago, Chile |
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| Abstract: | We observed a self-sustained current oscillation in an InGaAs/InAlAs superlattice at room temperature. The oscillation gave rise to microwave generation at a fundamental frequency around 2 GHz and higher harmonics. The power at the first harmonic was 0.1 mW, corresponding to an efficiency (i.e. ratio of microwave power to dc power) of 3.5%. We attribute the current oscillation to travelling dipole domains. |
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