Abstract: | With K2O as flux, near‐stoichiometric In:LiNbO3 (In:SLN) crystals with different indium contents were grown by the top seed solution growth (TSSG) method. Defect structure characteristics and the replacement principle of extrinsic ions were derived from X‐ray powder diffraction, differential thermal analysis (DTA), ultraviolet‐visible (UV) absorption and infrared (IR) spectrum measurement. Further analysis indicated that the threshold concentration of In2O3 in near‐stoichiometric LiNbO3 crystals were about 1.1 mol%. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |