Optical properties of excitons in semiconductor superlattices and microcavities |
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| Affiliation: | 1. Facultad de Ciencias Fı́sico-Matemáticas, Posgrado en Optoelectrónica, Universidad Autónoma de Puebla, Apartado Postal 1152, Puebla, 72000, México;2. Instituto de Fı́sica, Universidad Autónoma de Puebla, Apartado Postal J-48, Puebla, 72570, México;1. CSIR - Central Scientific Instruments Organisation, Sector 30C,Chandigarh,160030, India;2. Academy of Scientific & Innovative Research (AcSIR), CSIR-CSIO, Chandigarh, 160030, India;3. Indian Institute of Technology, Hauz Khas, New Delhi,110016, India;4. Optics & Allied Engineering, Bengaluru, 560099, India;1. Laboratory of Bio-inspired & Graphene Nanomechanics, Department of Civil, Environmental and Mechanical Engineering, University of Trento, Via Mesiano 77, 38123 Trento, Italy;2. European Center for Theoretical Studies in Nuclear Physics and Related Areas (ECT*-FBK) and Trento Institute for Fundamental Physics and Applications (TIFPA-INFN), 38123 Trento, Italy;3. Faculty of Mathematics and Physics, Charles University, 180 00 Prague 8, Czech Republic;4. Center for Materials and Microsystems, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Povo, TN, Italy;5. School of Engineering and Materials Science, Materials Research Institute, Queen Mary University of London, London E1 4NS, UK |
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| Abstract: | The optical response of Mott–Wannier excitons is investigated in semiconductor superlattices and microcavities. p-Polarized light is considered to calculate the reflectivity Rpand dispersion relation of the collective normal modes in superlattices accounting for extrinsic Morse potential wells, andRp in microcavities. Results of Rpexhibit well-defined peaks of the exciton bound states in the Morse potentials for both transverse and longitudinal modes. Comparisons ofRp with experimental reflectivity data of light for semiconductor microcavities exhibit good qualitative agreement as well as Rabi splitting. |
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