Behaviour of surface states on a GaAs/AlGaAs heterostructure investigated by capacitance spectroscopy |
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| Affiliation: | 1. Department of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, U.K.;2. Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, U.K.;3. Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8QQ, U.K.;4. Faculty of Science, Helwan University, Cairo, Egypt;1. Department of Physics, The University of Burdwan, West Bengal, India;2. Department of Physics, Pondicherry University, R.V. Nagar, Kalapet, Puducherry 605014, India;1. CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China;2. State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, Shanxi 030006, China;3. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China;4. Beijing Computational Science Research Center, Beijing 100084, China;5. Department of Physics, Southeast University, Nanjing 211189, China;6. State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China;7. CAS Center for Excellence in Quantum Information and Quantum Physics, Hefei 230026, China |
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| Abstract: | Low temperature depletion capacitance-voltage data, taken from a novel open design of surface superlattice fabricated on a GaAs/AlGaAs heterostructure, are compared with two theoretical models. These assume either that the Fermi level on the free semiconductor surface is pinned, or that the surface charge state is unaltered (frozen) when the superlattices are biased. The data are in much better agreement with the frozen surface model. |
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