Size effect on doped single walled carbon nanotubes |
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Authors: | R Geetha V Gayathri |
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Institution: | Department of Physics, Thiagarajar College of Engineering, Madurai-625015, India |
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Abstract: | Considering impurity doping in small sized carbon nanotubes of diameter around 0.4 nm, we have calculated the donor binding energy by increasing the dopant concentration through a screening function that includes the curvature effect. We could observe the sudden fall in donor binding energy and metallic behaviour of the smaller single walled carbon nanotubes around 1011/cm2 (0.0026%) of impurity concentration. This result is useful for nano electronic device application such as nano diodes and switches. |
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Keywords: | Smaller carbon nanotube Donor binding energy Impurity concentration Curvature effect |
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