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Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off
Authors:C Xiong  F Rizzi  K Bejtka  PR Edwards  E Gu  MD Dawson  RW Martin  IM Watson
Institution:1. School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, Beijing 100871, People’s Republic of China;2. Italian Institute of Technology, Via Morego 30, 16163 Genova, Italy;3. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK;4. Institute of Photonics, SUPA, University of Strathclyde, Glasgow G4 0NW, UK;5. CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, Valbonne, France
Abstract:
Keywords:Gallium nitride  Aluminium indium nitride  Microcavity  Wet etching  Reflectance  Photoluminescence
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