Design,fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection |
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Authors: | Farahiyah Mustafa Norfarariyanti Parimon Abdul Manaf Hashim Shaharin Fadzli Abd Rahman Abdul Rahim Abdul Rahman Mohd Nizam Osman |
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Affiliation: | 1. Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia;2. Telekom Research & Development, TM Innovation Centre, 63000 Cyberjaya, Selangor, Malaysia |
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Abstract: | A Schottky diode was designed and fabricated on an n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for RF power detection. The processing steps used in the fabrication were the conventional steps used in standard GaAs processing. Current–voltage measurements showed that the devices had rectifying properties with a barrier height of 0.5289–0.5468 eV. The fabricated Schottky diodes detected RF signals well and their cut-off frequencies up to 20 GHz were estimated in direct injection experiments. To achieve a high cut-off frequency, a smaller Schottky contact area is required. The feasibility of direct integration with the planar dipole antenna via a coplanar waveguide transmission line without insertion of matching circuits was discussed. A higher cut-off frequency can also be achieved by reducing the length of the coplanar waveguide transmission line. These preliminary results represent a breakthrough as regards direct on-chip integration technology, towards the realization of a ubiquitous network society. |
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Keywords: | Schottky diode Dipole antenna AlGaAs/GaAs RF power detector HEMT |
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