Improved electrical and thermal properties of nickel silicides by using a NiCo interlayer |
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Authors: | Jin-Bok Lee Sang-Yong Jeong Bong-Jun Park Chel-Jong Choi Kwon Hong Sung-Jin Whang Tae-Yeon Seong |
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Institution: | 1. Department of Materials Science and Engineering, Korea University, Seoul 136-713, Republic of Korea;2. Department of Nano-Semiconductor Engineering, Korea University, Seoul 136-713, Republic of Korea;3. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;4. R&D Division, Hynix Semiconductor Inc., Icheon-si, Kyounki-do, 467-701, Republic of Korea |
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Abstract: | We have investigated the effects of a NiCo interlayer on the electrical and thermal properties of nickel silicide as a function of the annealing temperature. For the interlayered samples, 3 nm-thick NiCo(10 at.% Co) films are electron-beam evaporated on Si substrates, on which 27 nm-thick Ni films are deposited without breaking the vacuum. It is shown that all the samples exhibit a distinctive increase in the sheet resistance at temperatures above 900 °C. However, the NiCo interlayer sample produces the lowest sheet resistance at 900 \circC. X-ray diffraction results show that the Ni only and NiCo interlayer samples produce NiSi and NiSi2 phases, while NiCo full samples give NiSi and Ni1−xCoxSi2 phases. Scanning electron microscopy results exhibit that for all the samples, the surfaces become degraded with numerous arbitrarily-shaped spots, corresponding to areas uncovered by the silicides. The areal fractions of the silicides for the Ni only, NiCo full, and NiCo interlayer samples are about 57%, 72%, and 81%, respectively. The temperature dependence of the electrical properties of the silicide samples is explained in terms of the formation of resistive phases and the agglomeration of the silicide. |
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Keywords: | Nickel silicide NiCo interlayer Thermal stability |
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