Effect of progressive annealing on Silicon Nanostructures grown by Hot Wire Chemical Vapor Deposition |
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Authors: | Tarkeshwar C. Patil Prantik MahajanS. Chakrabarti |
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Affiliation: | Center of Excellence in Nanoelectronics (CEN), Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, Maharashtra, India |
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Abstract: | In this work, the evolution of Silicon Nanostructures with progressive annealing has been studied. Hot Wire CVD (HWCVD) process was used to deposit a SixNy/a-Si structure on an n-type 〈100〉 Silicon substrate with the Nitride acting as the buffer layer. The depositions were carried out at a low substrate temperature (250 °C) which is precisely why HWCVD was chosen over other processes for this work. The as-deposited sample was then annealed at 800 °C and 900 °C respectively. AFM studies revealed promising results hinting at the presence of Silicon Nanostructures. With progressive annealing the Nanostructures began to evolve, eventually turning into sharp Nanopillars upon annealing at 900 °C. In this paper, a growth model has been proposed which attempts to validate the experimental results. Though a lot of work is currently underway in this field, study of Silicon Nanostructures grown by HWCVD technique is relatively new. |
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Keywords: | Silicon Nanostructures Hot Wire CVD Nanopillars AFM |
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