Simulation study of semi-superjunction power MOSFET with SiGe pillar |
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Authors: | Ying Wang Hai-fan HuChao Cheng |
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Affiliation: | College of Information and communication Engineering, Harbin Engineering University, 150001 Harbin, China |
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Abstract: | The feasibility of applying the semi-superjunction (Semi-SJ) with SiGe-pillar (SGP) concept to Power MOSFET is studied in this paper. The electrical performances of SGP are compared with the conventional Power MOSFET through 3D device simulation work in terms of specific-on resistance (Ron), breakdown-voltage (BV ), the effect to change the Ge mole fraction in the SGP and the thermal stabilization. The results show that the Ron is reduced by 44% on the base of BVs reducing only 4.8%, tradeoff Ron vs. BV and thermal stabilization of SGP are superior to that of conventional Semi-SJ since the strain effect inducing into the SGP structure in the low power device application. |
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Keywords: | Semi-superjunction (Semi-SJ) SixGe1&minus x Power MOSFET Ron BV |
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