Simulation study of semi-superjunction power MOSFET with SiGe pillar

The feasibility of applying the semi-superjunction (Semi-SJ) with SiGe-pillar (SGP) concept to Power MOSFET is studied in this paper. The electrical performances of SGP are compared with the conventional Power MOSFET through 3D device simulation work in terms of specific-on resistance (_Ron)$\left(R_{on}\right)$, breakdown-voltage (BV  ), the effect to change the Ge mole fraction in the SGP and the thermal stabilization. The results show that the _Ron$R_{on}$ is reduced by 44% on the base of BVs   reducing only 4.8%, tradeoff _Ron$R_{on}$ vs. BV and thermal stabilization of SGP are superior to that of conventional Semi-SJ since the strain effect inducing into the SGP structure in the low power device application.