Highly uniform sheet resistance of the double-channel AlInN/GaN heterostructure |
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| Authors: | S Zhang JY Yin ZH Feng MC Li JZ Wang LC Zhao |
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| Institution: | 1. Department of Information Materials Science and Technology, Harbin Institute of Technology, Harbin 150001, China;2. National Key Lab. of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China |
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| Abstract: | A high uniformity of sheet resistance was achieved in the double-channel (DC) Al0.82In0.18N/GaN heterostructure by lowering the interface roughness scattering effect. The variation of the AlInN/GaN interface roughness as a key factor influenced the uniformity of the sheet resistance. In the DC heterostructure, the distribution of the two dimension electron gas (2DEG) was modified to reduce interface roughness scattering effect. As a result, the uniformity of the sheet resistance was enhanced, and the nonuniformity of the sheet resistance in the DC Al0.82In0.18N/GaN could be reduced to 0.7% after structure optimization. |
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| Keywords: | Sheet resistance Heterostrucutre Interface roughness Uniform Atomic force microscopy |
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