Simulation of current spreading for GaN-based light-emitting diodes |
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Authors: | Pei Wang Wei Wei Zhiyin Gan Sheng Liu |
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Affiliation: | a School of Mechanical Engineering, Huazhong University of Science & Technology, 1037 Luoyu Road, Wuhan 430074, China b Wuhan National Lab of Optoelectronics, Huazhong University of Science & Technology, 1037 Luoyu Road, Wuhan 430074, China |
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Abstract: | Uniform current spreading is crucial for the performance of light-emitting diodes (LEDs). It has been reported that the reliability and light distribution are affected by non-uniform current spreading. In this paper, the impact of different electrode patterns on the performance of LED chips is investigated. A hybrid modeling method is employed to analyze the electrical and thermal characteristics of LEDs with two different electrode mesa structures. Corresponding experiments are also carried out to validate the calculation results. It is found that increasing amount of p-electrodes in interdigitated electrode patterns is effective in improving the performance of LEDs. |
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Keywords: | GaN Light-emitting diodes Current spreading |
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