首页 | 本学科首页   官方微博 | 高级检索  
     


Pockels effect in short period silicon germanium superlattices
Authors:J.B. Khurgin  M.W. Pruessner  W.S. Rabinovich
Affiliation:a Johns Hopkins University, Baltimore MD 21218, USA
b Naval Research Laboratory, Washington DC, USA
Abstract:We introduce a simple method of calculating Pockels coefficients in ordered SiGe superlattices and show that the Pockels effect in them can be half as strong as in GaAs, thereby opening a path to efficient CMOS-compatible electro-optic modulators.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号