Laser diode pumped actively Q-switched Nd:GdVO4 self-Raman laser operating at 1173 nm |
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| Authors: | Zhichao Wang Chenlin Du Shuangchen Ruan Li Zhang |
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| Institution: | a College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, PR China
b Shenzhen Key Laboratory of Laser Engineering, Shenzhen 518060, PR China |
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| Abstract: | A laser diode pumped actively Q-switched Nd:GdVO4 self-Raman laser operating at 1173 nm is presented. The maximum output power was 2.26 W at an incident pump power of 18 W, with the corresponding optical conversion efficiency of 12.6%. Two different resonator configurations were investigated in order to achieve high output power and efficiency. |
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| Keywords: | Self-Raman laser Nd:GdVO4 crystal Actively Q-switching |
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