Preparation, structures, and band gaps of RbInS2 and RbInSe2

The two compounds RbInS₂ and RbInSe₂ have been synthesized at 773 K by means of the reactive flux method. These isostructural compounds crystallize in space group C2/c of the monoclinic system with 16 formula units in a cell at 153 K of dimensions , , , and β=100.244(1)° for RbInS₂, and , , , and β=100.16(2)° for RbInSe₂. The In atoms are four-coordinated. The structure consists of two-dimensional (Q=S, Se) layers perpendicular to [001] separated from the Rb⁺ cations. Adamantane-like In₄Q₁₀ units are connected by common corners to form the layers. Band structure calculations indicate that these compounds are direct band-gap semiconductors with the smallest band gap at the Γ point. The calculated band gaps are 2.8 eV for RbInS₂ and 2.0 eV for RbInSe₂, values that are consistent with the colors of the compounds.