| 掺In对反型AlGaAs/GaAs异质界面质量的改善及其应用 |
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| 引用本文： | 尚勋忠,王文冲,郭丽伟,吴曙东,牛萍娟,黄绮,周均铭. 掺In对反型AlGaAs/GaAs异质界面质量的改善及其应用[J]. 半导体学报, 2004, 25(9): 1128-1131 |
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| 作者姓名： | 尚勋忠 王文冲 郭丽伟 吴曙东 牛萍娟 黄绮 周均铭 |
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| 作者单位： | 中国科学院物理研究所,北京,100080;中国科学院物理研究所,北京,100080;中国科学院物理研究所,北京,100080;中国科学院物理研究所,北京,100080;中国科学院物理研究所,北京,100080;中国科学院物理研究所,北京,100080;中国科学院物理研究所,北京,100080 |
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| 摘 要： | 研究了Al Ga As层掺1%的In对Al Ga As/Ga As量子阱光致发光谱的半峰宽的影响.2 5 K的光致发光结果表明,In作为表面活化剂能有效改善Al Ga As/Ga As异质界面的粗糙度.将此方法应用到反型Al Ga As/Ga As高电子迁移率晶体管(HEMT)材料结构中,Hall测量表明该方法能有效提高反型HEMT的电学性能
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| 关 键 词： | 量子阱 高电子迁移率晶体管 界面粗糙度 光致发光 表面活化剂 |
| 文章编号： | 0253-4177(2004)09-1128-04 |
| 修稿时间： | 2003-08-18 |
Indium Doping to Improve Heterojunction of AlGaAs/GaAs and Its Application |
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| Shang Xunzhong,Wang Wenchong,Guo Liwei,Wu Shudong,Niu Pingjuan,Huang Qi and Zhou Junming. Indium Doping to Improve Heterojunction of AlGaAs/GaAs and Its Application[J]. Chinese Journal of Semiconductors, 2004, 25(9): 1128-1131 |
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| Authors: | Shang Xunzhong Wang Wenchong Guo Liwei Wu Shudong Niu Pingjuan Huang Qi Zhou Junming |
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| Abstract: | Effects of In doping on the optical properties of AlGs/Gs quantum wells (QWs ) and the electrical properties of inverted AlGs/Gs high electron mobility t ransistors (HEMTs) are investigated.It is found that a little In incorporation i n AlGs layers can decrease the photoluminescence linewidths of AlGs/Gs QWs drastically and a little In doping in AlGs layer can significantly increase t he electron mobilities of inverted AlGs/Gs HEMTs at 77K.All these results de monstrate that In doping can reduce the interface roughness due to In as a surfa ctant which can enhance the surface migration of Al adatoms during molecular bea m epitaxy. |
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| Keywords: | quantum wells high electron mob ility transistor interface roughness photoluminescence surfactant |
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