| T1系超导薄膜金属涂层的生长与特性研究 |
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| 引用本文： | 季鲁 阎少林 赵新杰 方兰 李永刚 何明. T1系超导薄膜金属涂层的生长与特性研究[J]. 低温物理学报, 2007, 29(1): 18-20 |
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| 作者姓名： | 季鲁 阎少林 赵新杰 方兰 李永刚 何明 |
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| 作者单位： | 南开大学电子科学系,天津300071 |
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| 基金项目： | 教育部博士点基金（项目编号：20050055028）,国家科技部“973”（编号项目：2006CB601006）和天津市电于薄膜器件与技术重点实验室资助的课题, |
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| 摘 要： | 我们研究了T1-2212超导薄膜在带有YSZ／CeO2缓冲层和带有Ce02／YSZ／CeO2缓冲层的Ni金属RABiTS基带上的生长情况．基带上的缓冲层是采用PLD方法制备的，T1-2212薄膜的制备采用了磁控溅射和后热处理两步方法．XRD实验结果表明。T1-2212薄膜都具有很好的C轴垂直于膜面的织构，并具有双向外延生长特性．在CeO2／YSZ／CeO2／Ni基带上制作的T1-2212薄膜的Tc达到102．8K，J,（77K,0T）达到2.6MA／cm^2；在YSZ／CeO2／Ni基带上薄膜Tc可达97．7K，Jc（77K,0T）也可以达到0．45MA／cm^2.
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| 关 键 词： | T1-2212 RABTiS 缓冲层 YSZ CeO2 |
| 修稿时间： | 2005-08-15 |
GROWTH AND PROPERTIES OF TI-BASED SUPERCONDUCTING FILM COATED CONDUCTORS |
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| Ji Lu ,Yan SHao-lin ,ZHao Xin-jie ,Fang Lan, Li Yong-gang, He Ming,. GROWTH AND PROPERTIES OF TI-BASED SUPERCONDUCTING FILM COATED CONDUCTORS[J]. Chinese Journal of Low Temperature Physics, 2007, 29(1): 18-20 |
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| Authors: | Ji Lu Yan SHao-lin ZHao Xin-jie Fang Lan Li Yong-gang He Ming |
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| Affiliation: | Department of Electronics, Nankai University, Tianjin 300071 C. Cai, J. Eickemeyer and B. Holzapfel IFW Drcsden, D-01171 Dresden, Germany |
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| Abstract: | Preparation and properties of Tl-2212 thin films on YSZ/CeO2 buffered and CeO2/YSZ/CeO2 buffered Ni RABiTS have been studied,respectively. The buffer layers were prepared using PLD method. Tl-2212 thin films were fabricated by magnetron sputtering and post-annealing process. XRD experimental results improved that the Tl-2212 thin films were epitaxial growth on both of the buffered RABiTS. The Tc of 102.8 K and Jc(77 K, 0T) of 2 MA/cm2 could be obtained for the Tl-2212 thin film on the RABiTS with CeO2/YSZ/CeO2 layer. Tc of 97.7 K and Jc(77 K, 0T) of 0.45 MA/cm2 could be obtained for the film on the RABiTS with YSZ/CeO2 layer. |
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| Keywords: | T1-2212 RABTiS Buffer layer YSZ CeO2 |
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