Transport, optical and magnetotransport properties of hetero-epitaxial InAsxSb1−x/GaAs(x0.06) and bulk InAsxSb1−x (x0.05) crystals: experiment and theoretical analysis |
| |
Authors: | Bhavtosh Bansal V K Dixit V Venkataraman H L Bhat |
| |
Institution: | Department of Physics, Indian Institute of Science, Bangalore 560 012, India |
| |
Abstract: | We briefly review the growth and structural properties of InAsxSb1−x (x0.05) bulk single crystals and InAsxSb1−x (x0.06) epitaxial films grown on semi-insulating GaAs substrates. Temperature-dependent transport measurements on these samples are then correlated with the information obtained from structural (XRD, TEM, SEM) and optical (FTIR absorption) investigations. The temperature dependence of mobility and the Hall coefficient are theoretically modelled by exactly solving the linearized Boltzmann transport equation by inversion of the collision matrix and the relative role of various scattering mechanisms in limiting the low temperature and 300 K mobility is estimated. Finally, the first observation of Shubnikov oscillations in InAsSb is discussed. |
| |
Keywords: | InAsSb InSb Narrow gap semiconductors Magnetotransport Hall mobility Boltzmann equation |
本文献已被 ScienceDirect 等数据库收录! |