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Evolution of water vapor from indium-tin-oxide thin films fabricated by various deposition processes |
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| Authors: | Seki S Aoyama T Sawada Y Ogawa M Sano M Miyabayashi N Yoshida H Hoshi Y Ide M Shida A |
| Institution: | (1) Graduate School of Engineering, Tokyo Institute of Polytechnics, 1583 Iiyama, Atsugi, Kanagawa 243-0297, Japan;(2) ESCO Co., Ltd, 1-3-10, Nishikubo, Musasino, Tokyo 180-0013, Japan;(3) Geomatec Co., Ltd, 3-13-7, Yaguchi, Ota-ku, Tokyo 146-0093, Japan;(4) Yokohama City Center for Industrial Technology and Design, 1-1-1 Fukuura, Kanazawa-ku, Yokohama 236-0004, Japan |
| Abstract: | Tin-doped In2O3 (indium-tin-oxide) transparent conducting films are widely used as electrodes of liquid crystal displays and low-E windows. In the present study, a systematic TDS study was undertaken for ITO films fabricated by various deposition processes; such as PVD, dip coating and spray deposition. Water vapor was the main gas evolved from the films; gas evolution from the silicon substrate was negligible. The evolution proceeded via two steps at approximately 373 and 473-623 K. The amount of the evolved water was in the order: (dip-coated film)>(PVD films)> (spray-deposited film). This order was identical to that of the film's resistivities. This revised version was published online in August 2006 with corrections to the Cover Date. |
| Keywords: | thin films indium-tin-oxide water vapor grain size thermal desorption spectroscopy |
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