Resonance amplifier model describing diode lasers coupled to short external resonators |
| |
Authors: | C Voumard R Salathé H Weber |
| |
Institution: | (1) Institute of Applied Physics, University, CH-3000 Berne, Switzerland;(2) Present address: Department of Physics, University of Kaiserslautern, D-6750 Kaiserslautern, Fed. Rep. Germany |
| |
Abstract: | A model of a regenerative resonance amplifier has been used to describe Fabry-Perot GaAs diode lasers coupled to short external
resonators. The optical gain and the equivalent input of the resonance amplifier are controlled by means of appropriate rate
equations. Homogeneous line-broadening and proportionality between gain and electron density have been assumed in this approach.
The model was applied to a diode laser coupled to an external plane mirror placed at a variable distance from one diode mirror.
A numerical evaluation of the coupling coefficient between laser and external cavity enables to predict the measured power
output and mode selective properties of the coupled system. A similar analysis was done for diode lasers coupled to external
hemispherical resonators. The model calculation confirms the previously demonstrated mode selective properties of the hemispherical
configuration which permitted stable single mode operation. |
| |
Keywords: | 42 60 |
本文献已被 SpringerLink 等数据库收录! |