Strain analysis and optical characterization of LPE InGaAsP laser-confining layers

The compositional dependence of lattice parameters and strains induced by lattice mismatch of liquid phase epitaxial (LPE) In_1–x Ga _x AS _y P_1–y /InP with smallx andy are studied. The measured elastic strain is proportional to the lattice mismatch within certain critical limits; as much as 78% of the mismatch strain is found to be accommodated elastically under both compression and tension. The near-band edge absorption and photoluminescence measurements yield the free electron and hole recombination probability and the compositional dependence of the energy gap at low temperature. The influence of the lattice mismatch on the optical properties is discussed.On leave from Institute of Semiconductors, Chinese Academy of Sciences, Peking, ChinaOn leave from Instituto de Fisica, Universidade Estadual de Campinas, Campinas, S.P. 13100, Brazil