Effect of lower growth temperature on C incorporation in GeC epilayers on Si(0 0 1) grown by MBE |
| |
Authors: | M. Okinaka Y. Hamana T. Tokuda J. Ohta M. Nunoshita |
| |
Affiliation: | Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara, 630-0101, Japan |
| |
Abstract: | Effect of lower growth temperature Ts on C incorporation to substitutional sites in Ge1−xCx/Si(0 0 1) grown by molecular beam epitaxy was investigated. To enhance the non-equilibrium growth condition, the temperature Ts was lowered from 600°C down to 300°C. The C incorporation into substitutional sites of GeC epilayers was very sensitive to Ts. X-ray diffraction (XRD) measurement indicated that the substitutional C composition x increased with decrease in Ts from 600°C to 400°C. At Ts350°C, the estimation of x by the XRD analysis was impossible because of polycrystallization. The Raman shift measurement enables to estimate x for Ts350°C, as consequently larger x than that grown at Ts=400°C was verified. The enhancement of non-equilibrium growth condition by decreasing Ts was important to increase x. |
| |
Keywords: | A1. Crystal structure A2. Single crystal growth A3. Molecular beam epitaxy B1. Germanium carbon epilayer |
本文献已被 ScienceDirect 等数据库收录! |