A model of strain relaxation in hetero-epitaxial films on compliant substrates |
| |
| Authors: | G. Kästner U. Gösele T.Y. Tan |
| |
| Affiliation: | (1) Max-Planck-Institute of Microstructure Physics, D-06120 Halle, Germany, DE;(2) Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300, USA, US |
| |
| Abstract: | 0 these maximum relieved strains are φ0/2, φ0, 3φ0/2 and 2φ0 respectively, at the end of each of stages I–IV. Films relaxed in each stage are characterized by a specific set of macroscopic crystallographic features that can be observed experimentally, including lattice rotation, lattice tilt, and the presence of more than one variant in some cases. For example, complete untwisting is predicted for stage IV relaxation, resulting in the disappearance of the initial twist angle between the two lattices. To relax the elastic misfit strain, extensive plastic deformation of the substrate film is involved, thus making it compliant to the hetero-epitaxial film. This thin film substrate may be called the plastically compliant substrate (PCS). Received: 18 June 1997/Accepted: 27 June 1997 |
| |
| Keywords: | PACS: 61.70.Le 61.70.Tm 61.70.Wp |
| 本文献已被 SpringerLink 等数据库收录！ |
|
