| 决定AlGaInP高亮度发光二极管光提取效率的主要因素 |
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| 引用本文： | 王国宏,彭怀德.决定AlGaInP高亮度发光二极管光提取效率的主要因素[J].光子学报,1998,27(10):952-957. |
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| 作者姓名： | 王国宏 彭怀德 |
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| 作者单位： | 光电子器件国家工程研究中心中国科学院半导体研究所 |
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| 摘 要： | 影响发光二极管光提取效率的主要因素有:出光表面状态、上电极和体内吸收.对于AlGaInP高亮度发光二极管体内吸收主要是衬底和发光区的吸收.一般采用出光表面粗化、窗口层、DBR反射器等措施来提高光提取效率.本文以自发辐射随机分布模型为基础,以AlGaInP高亮度发光二极管典型结构的各种参数为依据,从理论上分析了这几种主要措施对光提取效率的影响.
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| 关 键 词： | AlGaInP高亮度发光二极管 光提取效率 |
| 收稿时间： | 1998-05-20 |
DETERMINANTS OF LIGHT EXTRACTION EFFICIENCY FOR AlGaInP HIGH BRIGHTNESS LIGHT EMITTING DIODES |
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| Wang Guohong,Ma Xiaoyu,Peng Huaide,Wang Shutang,Li Yuzhang,Chen Lianghui.DETERMINANTS OF LIGHT EXTRACTION EFFICIENCY FOR AlGaInP HIGH BRIGHTNESS LIGHT EMITTING DIODES[J].Acta Photonica Sinica,1998,27(10):952-957. |
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| Authors: | Wang Guohong Ma Xiaoyu Peng Huaide Wang Shutang Li Yuzhang Chen Lianghui |
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| Institution: | National Engineering Research Center for Optronics Devices Institute of Semiconductors, Chinese Academy of Sciences P. O. Box 912 Beijing 100083 |
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| Abstract: | s The determinants of light extraction efficiency for light emitting diodes include:the status of light output surface,light absorption of anode and diode bulk.For AlGaInP highbrightness light emitting diodes the bulk absorption mainly caused by the GaAs substrate and active layer.Surface roughness,window layer and DBR reflector were usually employed to raise the light extraction efficiency,Effects of these measurements were discussed theoretically based on the model of random distribution of spontaneous emission and typical structure of AlGaInP highbrightness light emitting diodes. |
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| Keywords: | AlGaInP Highbrightness light emitting diodes Light extraction efficiency |
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