高迁移率聚合物薄膜晶体管

以高掺杂Si单晶片作为栅电极, 热生长SiO₂作为栅介质层, 聚三己基噻吩薄膜作为半导体活性层, Au作为源、漏电极, 并采用十八烷基三氯硅烷（OTS）对栅介质表面改性, 在空气环境下成功地制备出高性能聚合物薄膜晶体管. 结果表明, 通过采用OTS对栅介质层表面修饰大幅度地改善了聚合物薄膜晶体管的电性能, 器件的场效应迁移率高达0.02 cm²/（Vs）, 开关电流比大于10⁵. 关键词： 聚合物薄膜晶体管 聚三己基噻吩 场效应迁移率 表面修饰

High mobility polymer thin-film transistors

Polymer-based thin film transistors (PTFTs) were successfully fabricated on silicon substrates which was used as gate electrode, thermal silicon dioxide was used as gate insulators and poly(3-hexylthiophene) as semiconducting active layers for the transistors. The fabrication and measurement of the devices were all performed in the clean air. The PTFTs with a surface modified gate insulator show better electric characteristics with the field-effect mobility of 0.02 cm~2//(Vs) and the on/off ratio higher than 10~5 .