Influence of alloy composition on the diffusivity-mobility ratio in n-channel inversion layers on ternary semiconductors |
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| Authors: | A N Chakravarti A K Chowdhury K P Ghatak D R Choudhury |
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| Institution: | (1) Institute of Radio Physics and Electronics, University College of Science & Technology, 92 Acharya Prafulla Chandra Road, 700 009 Calcutta, India |
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| Abstract: | An expression is derived for the diffusivity-mobility ratio of the carriers in n-channel inversion layers on semiconductors like the ternary compounds which have strongly non-parabolic energy bands. The dependence of the ratio on alloy composition is also studied under the weak-field limit taking n-channel Hg1–xCdx.Te as an example.On leave of absence fromthe Department of Physics, Patna University, Patna, India. |
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