InGaAsP multiple quantum well edge-emitting light-emitting diode showing low coherence characteristics using selective-area metalorganic vapor phase epitaxy |
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Authors: | Yasumasa Kashima Tsutomu Munakata Akio Matoba |
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Institution: | (1) Optical Device Division, Oki Electric Industry Co.,Ltd., 193 Higashiasakawa, Hachioji, Tokyo, Japan |
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Abstract: | Low coherence multiple-quantum well edge-emitting light-emitting diodes were obtained using selective-area metalorganic vapor-phase
epitaxial growth, which utilized growth rate enhancement on an open stripe region between mask stripes. An optical absorption
region, which was controlled by selective-area growth, was introduced to suppress optical feedback. At a driving current of
100 mA and an ambient temperature of 25°C, a power of 55 μW was coupled into a single-mode fiber, and a broad spectrum without
spectral ripple was observed. Low coherence characteristics and very small temperature dependence were obtained in the temperature
range from -40°C to 85°C. The modulation bandwidth was 210 MHz at a bias current of 100 mA. |
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Keywords: | InGaAsP edge-emitting LED selective-area growth MOVPE multiple quantum well low coherence |
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