Anti-Stokes Bands of Intrinsic Radiation in Undoped GaAs Crystals |
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| Authors: | M B Litvinova |
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| Institution: | (1) Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauka Ave., Kiev, 03028, Ukraine |
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| Abstract: | It has been established that undoped gallium crystals exhibit anti-Stokes radiation with energy corresponding to the interband recombination of these crystals. Its appearance is most probably determined by EL2 defects, and its intensity depends on the product of the cross sections for photoionization of electrons and the holes from these defects. |
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| Keywords: | gallium arsenide anti-Stokes radiation EL2 defects metastable state |
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