Hydrogen photoevolution on InGaP polycrystalline and tandem-type electrodes |
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| Authors: | Jana Bludská Ivo Jakubec Dušan Nohavica Ladislav Pekárek |
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| Affiliation: | (1) Institute of Inorganic Chemistry, Acad. Sci. CR, Pelléova 24, 160 00 Praha 6, Czech Republic;(2) Institute of Radio Engineering and Electronics, Acad. Sci. CR, Chaberská 57, 182 51 Praha 8, Czech Republic;(3) Institute of Physics, Acad. Sci. CR, Na Slovance 2, 182 21 Praha 8, Czech Republic |
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| Abstract: | We report on preparation of p-In1−x Ga x P polycrystalline, p-In0.5 Ga0.5P/p-GaAs, and p-In0.5 Ga0.5P/n-GaAs/n-InP tandem-type cathodes. The photovoltaic efficiency of InGaP tandem type epitaxial electrodes is two times higher than that of polycrystalline photocathodes. The most significant advantage of epitaxial electrodes is in their markedly better corrosion resistance in comparison with polycrystalline photocatodes. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. |
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