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High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers |
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| Authors: | G Feng X M Shen J J Zhu B S Zhang D G Zhao Y T Wang H Yang J W Liang |
| Institution: | State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| Abstract: | A new method of measuring the thickness of GaN epilayers on sapphire (0 0 0 1) substrates by using double crystal X-ray diffraction was proposed. The ratio of the integrated intensity between the GaN epilayer and the sapphire substrate showed a linear relationship with the GaN epilayer thickness up to 2.12 μm. It is practical and convenient to measure the GaN epilayer thickness using this ratio, and can mostly eliminate the effect of the reabsorption, the extinction and other scattering factors of the GaN epilayers. |
| Keywords: | A1 X-ray diffraction A3 Metalorganic vapor phase epitaxy B1 Nitrides B2 Semiconducting III–V materials |
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