On the electrical resistivity and chemical etching of TiSi2 thin films sputtered from a composite target

The electrical resistivity of TiSi₂ thin films sputtered onto an oxidised Si substrate using a composite alloy target is studied. It is found that the as-deposited films show high resistivity. Annealing the films at an elevated temperature leads to a significant fall in the resistivity. An optimum sheet resistance of 2om tq⁻¹ is obtained after annealing at 800°C for 30 min in argon ambient. The effect of annealing temperature on resistivity is studied. The sheet resistance is also found to be affected by the magnitude of the substrate bias during film deposition. The data are given. The patterning of TiSi₂ thin films by wet chemical etching for device applications is described.