Preparation and Characterizations of New Hybrid PVA-InAlO Thin Films by Dip Coating Method

New hybrid PVA-InAlO thin films were successfully prepared by using the dip coating method. Functional group analysis confirms the presence of metal-oxide vibration in the prepared films. Structural analysis revealed that the prepared film was amorphous in nature whereas annealed films were polycrystalline in nature. Morphological images show that films are compact and have homogeneous grains of various sizes ranging between 200 and 400 nm. The compositional analysis confirms the presence of In, Al, and O. Dielectric constant values vary from 4.65 to 19.89 and dielectric loss values were ≤0.977. Activation energy was found to be very low. The results suggest that the new hybrid PVA-InAlO thin films could be used as high k layer in thin film transistor applications.