Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension |
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Authors: | Song Qing-Wen Zhang Yu-Ming Zhang Yi-Men Zhang Qian Guo Hui Li Zhi-Yun and Wang Zhong-Xu |
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Institution: | School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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Abstract: | This paper investigates the behaviours of 4H--SiC merged
PiN Schottky (MPS) rectifiers with junction termination extension
(JTE) by extensive numerical simulations. The simulated results show
that the present model matches the experimental data very well. The
influences of the JTE design parameters such as the doping
concentration and length of the JTE on the breakdown characteristics
are discussed in detail. Then the temperature sensitivity of the
forward behaviour is studied in terms of the different designs of
4H--SiC MPS with JTE, which provides a particularly useful guideline
for the optimal design of MPS rectifiers with JTE. |
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Keywords: | 4H--SiC merged PiN Schottky rectifier junction
termination extension breakdown thermal behaviour |
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