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Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension
Authors:Song Qing-Wen  Zhang Yu-Ming  Zhang Yi-Men  Zhang Qian  Guo Hui  Li Zhi-Yun and Wang Zhong-Xu
Institution:School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract:This paper investigates the behaviours of 4H--SiC merged PiN Schottky (MPS) rectifiers with junction termination extension (JTE) by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H--SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE.
Keywords:4H--SiC  merged PiN Schottky rectifier  junction termination extension  breakdown  thermal behaviour
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