Lithium inserted ZnSnN2 thin films for solar absorber: n to p-type conversion |
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| Authors: | Karthik kumar Chinnakutti Lokanath Patra Vengatesh Panneerselvam Durai Govindarajan Soorathep Kheawhom Jayaraman Theerthagiri Yiseul Yu Shyju Thankaraj Salammal Myong Yong Choi |
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| Affiliation: | 1. Department of Chemistry, Vinayaka Mission''s Kirupananda Variyar Arts and Science College, Vinayaka Mission''s Research Foundation (Deemed to Be University), Salem 636308, India;2. Department of Mechanical Engineering, University of California, Santa Barbara, CA 93106, United States;3. Centre of Excellence for Energy Research, Sathyabama Institute of Science and Technology, Chennai 600119, India;4. Department of Chemical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand;5. Research Unit of Advanced Materials for Energy Storage, Chulalongkorn University, Bangkok 10330, Thailand;6. Bio-Circular-Green-economy Technology & Engineering Center (BCGeTEC), Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand;7. Core-Facility Center for Photochemistry & Nanomaterials, Department of Chemistry (BK21 FOUR), Research Institute of Natural Sciences, Gyeongsang National University, Jinju 52828, Republic of Korea;8. Centre for Nanoscience and Nanotechnology, Sathyabama Institute of Science and Technology, Chennai 600119, India |
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| Abstract: | ZnSnN2 is a non-toxic and earth-abundant photoabsorber material for flexible photovoltaic devices because of its excellent optoelectronic behavior. However, theoretical studies show that the alkaline-earth metallic (Li, Na, K, Rb, Cs, and Fr) dopants in ZnSnN2, particularly lithium (Li), display shallow-acceptor behavior and improve the performance of ZnSnN2 semiconductors. Orthorhombic phase structure with (002) preferred orientation was observed for Li-doped films and the lattice parameters agree well with reported standards. Secondary ion mass spectroscopy (SIMS) analysis revealed the incorporation of Li in Li:ZnSnN2 films. XPS, the density of states, and Born effective charge analysis revealed the chemical bonding states of Li–ZnSnN2. In contrast to the pristine n-type ZnSnN2, Li:ZnSnN2 thin films showed conductivity with p-type hole concentrations varying between 1.14 × 1020–9.47 × 1019 cm?3 and the highest mobility of 20.03 cm2V?1s?1. Therefore, we obtained p-type conductivity by substituting an organolithium reagent (C?H?Li) on the Zn site, which highlights that Li:ZnSnN2 can be effectively used as the photoanode layer for next-generation thin-film solar cell devices. |
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| Keywords: | Lithium Photoabsorber Semiconductor Photovoltaic |
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