Pressure and temperature dependence of the electrical resistivity of bulk Al23 Te77 glass |
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Authors: | G Parthasarathy ESR Gopal ST Lakshmi Kumar |
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Institution: | Department of Physics, Indian Institute of Science, Bangalore 560 012, India |
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Abstract: | Electrical resistivity of bulk amorphous Al23T77 samples has been studied as a function of pressure (up to 80 kbar) and temperature (down to 77 K). At atmospheric pressure the temperature dependence of resistivity obeys the relation ? = π0 exp(δE/RT) with two activation energies. In the temperature range 300 K ? T > 234 K the activation energy is 0.58 eV and for 234 >T ? 185 K the value is δE = 0.30 ev. The activation energy has been measured as a function of pressure. The electrical resistivity decreases exponentially with the increase of pressure and at 70 kbar pressure the electrical behaviour of the sample shows a metallic nature with a positive temperature coefficient. The high pressure phase of the sample is found to be a crystalline hexagonal phase. |
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