Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films |
| |
Authors: | Zhu Zhi-Li Ding Yan-Li Wang Zhi-Yong Gu Jin-Hua and Lu Jing-Xiao |
| |
Institution: | School of Physical Engineering and Material Physics Laboratory, Zhengzhou University, Zhengzhou 450052, China |
| |
Abstract: | The scaling behaviour of surface roughness evolution of microcrystalline silicon (μc-Si:H) films prepared by very-high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by using a spectroscopic ellipsometry (SE) technique. The growth exponent β was analysed for the films deposited under different pressures Pg. The results suggest that films deposited at Pg = 70 Pa have a growth exponent β about 0.22, which corresponds to the definite diffusion growth. However, abnormal scaling behaviour occurs in the films deposited at Pg = 300 Pa. The exponent β is about 0.81 that is much larger than 0.5 of zero diffusion limit in the scaling theory. The growth mode of μ c-Si:H deposited at Pg= 300 Pa is clearly different from that of μc-Si:H at Pg = 70 Pa. Monte Carlo simulations indicate that the sticking process and the surface diffusion of the radicals are two key factors to affect the growth mode under different pressures. Under Pg= 300 Pa, β>0.5 is correlated with the strong shadowing effect resulting from the larger sticking coefficient. |
| |
Keywords: | microcrystalline Si thin film spectroscopic ellipsometry the growth exponent Monte Carlo simulations |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |