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Structural, electrical, optical and magnetic properties of Co0.2AlxZn0.8−xO films |
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| Authors: | Chia-Lung Tsai Chia-Jyi Liu Yu-Tai Shih Chao-Shien Huang Ya-Hui Chen |
| Affiliation: | a Department of Physics, National Changhua University of Education, Changhua 500, Taiwan b Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan c Ph.D. Program in Electrical and Communications Engineering, Feng Chia University, Taichung 407, Taiwan d Department of Automatic Control Engineering, Feng Chia University, Taichung 407, Taiwan |
| Abstract: | Co0.2AlxZn0.8−xO films prepared with different molar ratio of aluminum nitrate to zinc acetate were deposited on substrates by the sol-gel technique. X-ray diffraction, photoluminescence and ferromagnetism measurements were used to characterize the Co0.2AlxZn0.8−xO diluted magnetic semiconductors. The authors found that the intensity of the acceptor-related photoluminescence increased with increasing aluminum concentration and an increase in the number of the acceptor-like defects (zinc vacancies especially) in the Co0.2AlxZn0.8−xO film might lead to the enhancement of the magnetic properties. This implies that controls of the aluminum concentration and the number of the acceptor-like defects are important factors to produce strong ferromagnetism Co0.2AlxZn0.8−xO films prepared by the sol-gel method. |
| Keywords: | 71.55.Eq 72.80.Ey 73.61.Ga 75.70.&minus i 78.55.Et |
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