Surface termination of the NdGaO3(1 1 0) |
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Authors: | R. Dirsyte J. Schwarzkopf J. Lienemann H. Winter |
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Affiliation: | a Leibniz Institute for Crystal Growth, Max Born Straße 2, D-12489 Berlin, Germany b Department of Physics, Humboldt University, Newtonstraße 15, D-12489 Berlin, Germany |
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Abstract: | Auger electron spectroscopy using excitation via grazing impact of protons was applied to determine the elemental composition of the topmost and near-surface layers of a NdGaO3(1 1 0) substrate. The preparation conditions of vicinal NdGaO3 substrates were optimized by varying the annealing temperature, time, and gas atmosphere. Well prepared surfaces show regularly arranged, atomically smooth terraces with single-atomic steps. The surfaces were always NdO terminated with a small amount of Ga (2-4%) atoms on the surface. A Ga and O depletion layer with a thickness of about 4 nm has been detected at optimized preparation conditions. |
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Keywords: | Neodymium gallate Substrate Surface termination AES |
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