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Electric field effect in pulsed laser deposition of epitaxial ZnO thin film |
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| Authors: | C Hirose Y Matsumoto Y Yamamoto H Koinuma |
| Institution: | (1) Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Nagatsuda, Midori-ku, Yokohama, 226-8503, Japan;(2) Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, 226-8503, Japan;(3) National Institute of Materials Science, 1-1 Namiki, Tsukuba, Ibaragi, 305-0044, Japan;(4) CREST-Japan Science and Technology Agency, 3-4-1 Nihonbashi, Tokyo, 103-0027, Japan |
| Abstract: | We have developed a new system in which thin films can be pulsed laser deposited under an external electric field. Application of 1 kV high voltage to a thin metal wire placed 1 mm above an edge of a 14 mm long substrate distributes electric fields ranging from 4500 V/cm at the left to 50 V/cm at the right side of the substrate. The crystallinity of the ZnO thin film was remarkably improved in the area where the electric field higher than +100 V/cm was applied during the film deposition. Thus, the film growth of ZnO with a strong polarity along the c-axis was verified to depend on an external electric field. PACS 61.10.Nz; 68.55.-a; 72.80.Ga; 78.55.-m; 78.55.-Et |
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