| 用表面光压(SPV)法确定异型外延材料中的少子扩散长度 |
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| 引用本文： | 夏银水,宋加涛.用表面光压(SPV)法确定异型外延材料中的少子扩散长度[J].浙江大学学报(理学版),1991,18(2):185-189. |
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| 作者姓名： | 夏银水 宋加涛 |
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| 作者单位： | 杭州大学电子工程系
(夏银水，宋加涛)，杭州大学电子工程系(张秀淼) |
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| 摘 要： | 本文分析了用sPv法确定异型外延材料少子扩散长度的可行性，并对典型工艺参数，给出了有效少子扩散长度L。与外延层厚度d、外延层及栩}少子扩散长度L,, L:的关系曲线.提供了一种确定外延层材料少子扩散长度的新方法。
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| 关 键 词： | 外延材料 少子扩散长度 SPV法 |
SPV Method Extended to the Epitaxial Material of Different Conductive Type |
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| Xia Yinshui Song Jiatao Zhang Xiumiao.SPV Method Extended to the Epitaxial Material of Different Conductive Type[J].Journal of Zhejiang University(Sciences Edition),1991,18(2):185-189. |
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| Authors: | Xia Yinshui Song Jiatao Zhang Xiumiao |
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| Institution: | Department of Electronic Engineering |
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| Abstract: | The stead-state surface photovoltage (SPV) method for measuring minority carrier diffusion length has been extended to the case of an epitaxial layer on a thick substrate of the different conductive type. Based on a set of typical technological parameters, the curves of the effective minority diffusion length are shown in the thickness of epitaxial layer and minority carrier diffusion length of epitaxial layer and substrate. The new method to measure minority carrier diffusion length of the epitaxial is proved. |
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| Keywords: | SPV method epitaxial material diffussion length |
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