Photoacoustic measurements of the thermal properties of AlyGa1-yAs alloys in the region 0<y<0.5 |
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| Authors: | JL Pichardo E Marín JJ Alvarado-Gil JG Mendoza-Alvarez A Cruz-Orea I Delgadillo G Torres-Delgado H Vargas |
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| Institution: | (1) Depto. de Física, CINVESTAV-IPN, A.P. 14-740 México D.F. 07000, México (Fax: +52-57477-096, E-mail: fisjja@fis.cinvestav.mx), MX;(2) Programa Multidisciplinario de Ciencias Aplicadas y Tecnología Avanzada, CINVESTAV-IPN, A.P. 14-740, México D.F. 07000, México., MX;(3) Laboratorio de Investigación en Materiales, CINVESTAV-UAQ, C. Universitario, C. de las Campanas, Querétaro, Qro., México, MX |
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| Abstract: | y Ga1-yAs alloys grown by liquid phase epitaxy on GaAs substrates, by means of the open photoacoustic cell detection technique and
the temperature-rise method under continuous light illumination. The values of the thermal conductivity, diffusivity and specific
heat were obtained in the 0<y<0.5 region, where the AlyGa1-yAs band gap is mainly direct. The technique presented here is based upon an effective sample model which is shown to be suitable
for the determination of the thermal properties of two layer semiconductor specimens.
Received: 15 November 1996/Accepted: 5 March 1997 |
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| Keywords: | PACS: 44 50 +f 44 30 +v 65 90 +i |
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