Calibration of sputtering yields for AES depth profiling of oxide layers on aluminium by means of carrier-gas heat extraction analysis |
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Authors: | T F Chen R P H Garten E Grallath H Bubert and H Jenett |
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Institution: | (1) Laboratorium für Reinststoffanalytik des MPI für Metallforschung Stuttgart, Bunsen-Kirchhoff-Strasse 13, D-4600 Dortmund 1, Bundesrepublik Deutschland;(2) Institut für Spektrochemie und angewandte Spektroskopie, Bunsen-Kirchhoff-Strasse 11, D-4600 Dortmund 1, Bundesrepublik Deutschland |
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Abstract: | Summary For the purpose of obtaining suitable reference materials for technical coatings on aluminium, the feasibility of calibration of oxide layers by means of heat extraction was studied. Oxide layers were prepared on aluminium sheets by immersion in water of 50 or 80 ° C and annealing at 500 or 600 °C in argon atmosphere. The layer thickness was calculated from the oxygen content of the sample as measured by carrier-gas heat extraction analysis.The total sputtering yield of aluminium oxide layers was obtained via the correlation of AES depth profiling with heat extraction analysis results. This was demonstrated for high purity (99.9%) and technical purity (98.5%) aluminium with its original roughness from the rolling process, on which 20 to 1,000 nm thick oxide layers had been grown.The sputtering yields for the oxide layers prepared were found to be 3.9±0.8 atoms/ion, i.e., about four times higher than that for -Al2O3. Calibration of depth profiling on such technical quality oxide layers on aluminium was found to be feasible with a relative precision of 10 to 20%.
Kalibrierung der Ionenzerstäubung zur AES-Tiefenprofilanalyse von Oxidschichten auf Aluminium durch Trägergas-Heißextraktion On leave from the Institute of Photographic Chemistry, Academia Sinica, Beijing, People's Republic of China |
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