| Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices |
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| 引用本文： | 王保柱 王晓亮 胡国新 冉军学 王新华 郭伦春 肖红领 李建平 曾一平 李晋闽 王占国. Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices[J]. 中国物理快报, 2006, 23(8): 2187-2189 |
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| 作者姓名： | 王保柱 王晓亮 胡国新 冉军学 王新华 郭伦春 肖红领 李建平 曾一平 李晋闽 王占国 |
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| 作者单位： | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| 基金项目： | Supported by the Knowledge Innovation Project of Chinese Academy of Sciences, the National Natural Science Foundation of China under Grant No 60136020, the Special Funds for Major State Basic Research Project of China under Grant Nos G20000683 and 2002CB311903, and National High Technology Research and Development Programme of China under Grant No 2002AA305304. |
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| 摘 要： | Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition （MOCVD） Rapid thermal annealing （RTA） treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AIGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4 ×10^3 Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7 × 10^17 cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.
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| 关 键 词： | 退火 掺杂镁 超晶格 X射线衍射 |
| 收稿时间： | 2006-04-11 |
| 修稿时间： | 2006-04-11 |
Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices |
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| WANG Bao-Zhu,WANG Xiao-Liang,HU Guo-Xin,RAN Jun-Xue,WANG Xin-Hua,GUO Lun-Chun,XIAO Hong-Ling,LI Jian-Ping,ZENG Yi-Ping,LI Jin-Min,WANG Zhan-Guo. Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices[J]. Chinese Physics Letters, 2006, 23(8): 2187-2189 |
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| Authors: | WANG Bao-Zhu WANG Xiao-Liang HU Guo-Xin RAN Jun-Xue WANG Xin-Hua GUO Lun-Chun XIAO Hong-Ling LI Jian-Ping ZENG Yi-Ping LI Jin-Min WANG Zhan-Guo |
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| Affiliation: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Abstract: | |
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| Keywords: | 61.72.Vv 81.15.Gh |
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