Concentration profiles during films deposition from a low-energy ion beam

An ion beam is described in the diffusion approximation, and a mathematical model of thin-film deposition process is developed. The volume profiles of concentration of components during nickel film deposition on a copper substrate are calculated for ion energies of 100, 200, and 400 eV and ion flux densities I = 10¹⁵, 10¹⁶, and 10¹⁷cm⁻²·s⁻¹. The deposition model parameters are estimated using programs SUSPRE and SRIM. The concentration profiles of the components are compared for the corresponding numerical values of the model parameters. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 27–34, March, 2007.