| InAs量子点引入应力对调制掺杂结构中二维电子气输运特性的影响 |
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| 引用本文： | 田海涛,王禄,温才,石震武,孙庆灵,高怀举,王文新,陈弘. InAs量子点引入应力对调制掺杂结构中二维电子气输运特性的影响[J]. 发光学报, 2014, 35(6): 637-642. DOI: 10.3788/fgxb20143506.0637 |
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| 作者姓名： | 田海涛 王禄 温才 石震武 孙庆灵 高怀举 王文新 陈弘 |
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| 作者单位： | 1. 中国科学院物理研究所 北京凝聚态物理国家实验室, 北京 100190;2. 天津工业大学 电气工程与自动化学院, 天津 300387;3. 西南科技大学理学院 极端条件物质特性实验室, 四川 绵阳 621010 |
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| 基金项目： | 国家自然科学基金(61106013, 11104226); 国家“863”计划(2013AA031903); 国家“973”计划(2010CB327501, 2011CB925604)资助项目 |
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| 摘 要： | 系统研究了在调制掺杂AlGaAs/GaAs异质结中嵌入InAs量子点后对二维电子气输运特性的影响。使用分子束外延设备生长了量子点层与二维电子气沟道距离（Tch）不同的3个样品，霍尔测试结果表明，二维电子气的电子迁移率和载流子浓度都随Tch的减小而降低。基于几何相位分析算法对部分样品的高分辨透射电镜图像进行了处理，得到了其应变分布图。结果表明，应变主要分布在量子点的周围，并延伸到了量子点的上方。该不均匀的应力场可能是除库伦散射外影响电子迁移率降低的另一个重要因素。
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| 关 键 词： | 量子点 二维电子气 应力 分子束外延 |
| 收稿时间： | 2014-02-24 |
Effect of Strain Derived from Embedded InAs Quantum Dots on The Transport Properties of Two-dimensional Gas in Modulation-doped Heterostructure |
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| TIAN Hai-tao,WANG Lu,WEN Cai,SHI Zhen-wu,SUN Qing-ling,GAO Huai-ju,WANG Wen-xin,CHEN Hong. Effect of Strain Derived from Embedded InAs Quantum Dots on The Transport Properties of Two-dimensional Gas in Modulation-doped Heterostructure[J]. Chinese Journal of Luminescence, 2014, 35(6): 637-642. DOI: 10.3788/fgxb20143506.0637 |
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| Authors: | TIAN Hai-tao WANG Lu WEN Cai SHI Zhen-wu SUN Qing-ling GAO Huai-ju WANG Wen-xin CHEN Hong |
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| Affiliation: | 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;2. Department of Electrical Engineering and Automation, Tianjin Polytechnic University, Tianjin 300387, China;3. School of Science, Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China |
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| Abstract: | Effect of embedding InAs quantum dots (QDs) on the transport properties of two-dimensional gas (2-DEG) in a modulation-doped AlGaAs/GaAs heterostructure was investigated. Samples with difference thickness (Tch) from QDs layer to 2-DEG were prepared using molecular beam epitaxy. Hall measurements show that the mobility drops dramatically with the decrease of Tch, and the electron concentration shows a same trend. Strain distributions have been measured by means of geometric phase analysis of the high-resolution transmission electron microscope images. The results show that the strain is focused in the edges and above of InAs QDs which are resulted from the extended lattice distortion. And the non-uniform strain field could be another key factor for the drop of the mobility besides coulomb scattering. |
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| Keywords: | quantum dots two-dimensional electron gas strain molecular beam epitaxy |
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