| GaAs PIN二极管电热特性 |
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| 引用本文： | 戚玉佳,李永东,周家乐,王洪广,李平,刘纯亮.GaAs PIN二极管电热特性[J].强激光与粒子束,2014,26(6):065009. |
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| 作者姓名： | 戚玉佳 李永东 周家乐 王洪广 李平 刘纯亮 |
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| 作者单位： | 1.电子物理与器件教育部重点实验室西安交通大学, 西安 71 0049; |
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| 基金项目： | 国家自然科学基金项目(51277147);高功率微波技术重点实验室基金项目 |
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| 摘 要： | 通过T-CAD软件建立了PIN二极管的电学模型和热学模型,模拟了PIN二极管的稳态与瞬态特性。研究了PIN二极管器件在正反偏压和脉冲电压下的电学特性及热学特性,讨论了PIN二极管的I层厚度与温度的关系,模拟得到了不同I层厚度的稳态与瞬态响应曲线、得到了与器件内部温度的关系。模拟结果表明:随着I层厚度的增加,器件内部最高温度增长减慢,器件内部最高温度区由结区位置向器件的中间位置移动。
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| 关 键 词： | PIN二极管 电热特性 脉冲电压 |
| 收稿时间： | 2013/11/15 |
Electric thermal characteristics of GaAs PIN diodes |
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| Institution: | 1.Key Laboratory for Physical Electronics and Devices of the Ministry of Education,Xi’an Jiaotong University,Xi’an 710049,China;2.Northwest Institute of Nuclear Technology,Xi’an 710024,China |
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| Abstract: | An electric thermal model of PIN diodes was established with the T-CAD software, the steady-state and transient characteristics of PIN diodes have been numerically investigated. The electric thermal properties of PIN diodes were simulated under pulse and stable signals with forward and reverse voltage biases respectively, and the effects of the thickness of the intrinsic layer on the temperature inside the diode were studied with their steady-state and transient response curves. The simulation results show that, when the thickness of intrinsic layer increases, the peak temperature inside the diode increases slowly and the position of the high-temperature region moves from the junction to the middle of the diode. |
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| Keywords: | PIN diode electric thermal characteristic pulse voltage |
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