Characterization and field-emission property of aligned porous carbon nanotube film by hydrogen-ion implantation |
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Authors: | W.D. Yu J.H. Zhang X. Wang X.M. Li X.D. Gao |
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Affiliation: | (1) State Key Laboratory of High Performance Ceramics & Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, China;(2) Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China |
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Abstract: | To enhance the field emission of carbon nanotube (CNT) films, a novel technique that combines hydrogen-ion implantation used in the silicon-on-insulation smart-cut process and plasma-enhanced chemical vapor deposition was developed to produce an aligned porous carbon nanotube (AP-CNT) film on a Si substrate. All steps in the AP-CNT synthesis were carried out in vacuum, which reduced possible contamination. The morphology and the field-emission properties of the CNT films were investigated and results show that CNT holes with a diameter of 5 m and a depth of 30 m were produced in the AP-CNT film. The alignment of the CNTs is visibly improved. Due to the implantation treatment, the turn-on field of the CNT films decreased from 1.5 to 0.8 V/m, and the emission-current (and dot) density obviously increased. This field-emission improvement may mainly arise from the holes formed in the AP-CNT films. The edges of these holes not only intensified the electron emission but also increase the emission site density of the CNT films. PACS 81.05.Uw; 61.72.Tt; 85.45.Db |
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